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| GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT80J101A High Power Switching Applications * * * Enhancement-Mode High Speed: tf = 0.40 s (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A) Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power dissipation (Tc = 25C) Junction temperature Storage temperature Screw torque Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 20 80 160 200 150 -55~150 0.8 W C C N*m Unit V V A Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance tf toff Rth (j-c) Symbol IGES ICES VGE (OFF) VCE (sat) (1) VCE (sat) (2) Cies tr ton 15 V 0 -15 V 3.75 33 VIN VOUT Test Condition VGE = 25 V, VCE = 0 VCE = 600 V, VGE = 0 VCE = 5 V, IC = 80 mA IC = 10 A, VGE = 15 V IC = 80 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min 3.0 Typ. 2.4 5500 0.3 0.5 0.25 0.7 Max 500 1.0 6.0 2.0 3.0 0.6 0.8 s 0.40 1.0 0.625 C/W 961001EAA1 Unit nA mA V V pF VCC = 300 V * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-06-28 1/4 GT80J101A IC - VCE 100 15 20 8 Tc = 25 C 10 VCE - VGE (V) Common emitter Common emitter Tc = -40C 8 10 20 6 40 60 4 IC = 80 A 10 (A) 80 IC Collector current 60 6 40 20 5 Collector-emitter voltage 10 VCE VGE = 4 V 0 2 4 6 8 2 0 0 0 4 8 12 16 20 24 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 10 10 Tc = 25C 8 10 6 20 40 4 60 IC = 80 A VCE - VGE (V) Common emitter Common emitter Tc = 125C 8 10 6 20 40 4 60 IC = 80 A (V) VCE Collector-emitter voltage 2 Collector-emitter voltage 16 20 24 VCE 4 8 12 2 0 0 0 0 4 8 12 16 20 24 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 100 VCE = 5 V 4 VCE (sat) - Tc Collector-emitter saturation voltage VCE (sat) (V) Common emitter VGE = 15 V 3 80 2 50 30 IC = 10 A Common emitter (A) IC Collector current 80 60 40 Tc = 125C 20 25 -40 1 0 0 2 4 6 8 10 12 0 -40 0 40 80 120 160 Gate-emitter voltage VGE (V) Case temperature Tc (C) 2000-06-28 2/4 GT80J101A (x10 V) VCE, VGE - QG 20 10 Common emitter 16 RL = 1.88 Tc = 25C 5 3 Switching time - RG Common emitter VCC = 300 V IC = 80 A VGG = 15 V Tc = 25C toff ton (V) VGE (V) VCE Gate-emitter voltage 12 VCE = 150 V 8 100 50 Collector-emitter voltage Switching time (s) 1 tr tf 0.5 0.3 4 0 0 80 160 240 320 0.1 3 5 10 30 50 100 300 500 Gate charge QG (nC) Gate resistance RG () Switching time - IC 5 Common emitter 3 VCC = 300 V RG = 33 VGG = 15 V Tc = 25C 1 10000 30000 C - VCE (s) (pF) 5000 3000 Cies Switching time 0.5 0.3 toff Capacitance C 1000 500 300 Common emitter VGE = 0 V f = 1 MHz 20 30 40 50 60 70 80 100 50 1 Tc = 25C 3 5 10 30 50 Cres Coes ton tf tr 10 0.1 0 Collector current IC (A) 100 300 500 Collector-emitter voltage VCE (V) Safe Operating Area * Single Non-Repetitive Pulse Tc = 25C Curves must be Derated Linearly with Increase in Temperature. (A) 200 Rth (t) - tw Transient thermal resistance Rth (t) (C/W) 1 s * 10 s * 100 s * 102 101 100 10-1 10-2 10-3 10-5 Tc = 25 C IC IC max 100 (Pulsed) IC max (Continuous) DC Operation Collector current 30 10 3 10 ms * 1 ms * 1 1 3 10 30 100 300 1000 10-4 10-3 10-2 10-1 100 101 102 Collector-emitter voltage VCE (V) Pulse width tw (s) 2000-06-28 3/4 GT80J101A Reverse Bias SOA 300 100 (A) IC Collector current 30 10 3 1 Tj < 125C = VGE = +15 V -0 RG = 33 100 200 300 400 500 600 700 0.3 0.1 0 Collector-emitter voltage VCE (V) 2000-06-28 4/4 |
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